High-Density Well-Aligned Dislocations Introduced by Plastic Deformation in Bi1-xSbx Topological Insulator Single Crystals
High-Density Well-Aligned Dislocations Introduced by Plastic Deformation in Bi1-xSbx Topological Insulator Single Crystals
复制标题
Bi1-xSbx 拓扑绝缘体单晶中塑性变形引入的高密度对齐位错
DOI：
10.3390/cryst9060317
复制
发表时间：
2019
期刊：
影响因子：
2.7
通讯作者：
Edagawa Keiichi
中科院分区：
文献类型：
--
作者：
Tokumoto Yuki;Fujiwara Riku;Edagawa Keiichi
