Vapor-solid growth and characterization of aluminum nitride nanocones
Vapor-solid growth and characterization of aluminum nitride nanocones
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DOI：
10.1021/ja045682v
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发表时间：
2005-02-02
影响因子：
15
通讯作者：
Xu, NS
中科院分区：
文献类型：
--
作者：
Liu, C;Hu, Z;Xu, NS
氮化铝纳米结构在半导体纳米技术中具有广阔的应用前景。本文报道了在700℃左右的温和温度下，通过AlCl3蒸气与NH3气体的反应，在催化剂涂层晶片上气固相生长准定向氮化铝纳米锥，并对其生长机理进行了初步探讨。所制备的纤锌矿氮化铝纳米锥沿c轴择优生长，尖端尺寸在20-60 nm范围内可调。光致发光光谱显示了一个具有精细光子结构的宽的蓝色发射带，而场发射研究显示了一个显著的发射电流和中等的开启场强，这表明它们在光和电子发射纳米器件中具有潜在的应用前景。
Aluminum nitride nanostructures are attractive for many promising applications in semiconductor nanotechnology. Herein we report on vapor-solid growth of quasi-aligned aluminum nitride nanocones on catalyst-coated wafers via the re actions between AlCl3 vapor and NH3 gas under moderate temperatures around 700 degreesC, and the growth mechanism is briefly discussed. The as-prepared wurtzite aluminum nitride nanocones grow preferentially along the c-axis with adjustable dimensions of the sharp tips in the range of 20-60 nm. The photoluminescence spectrum reveals a broad blue emission band with a fine photon structure while the field emission study shows a notable emission current with a moderate turn-on field as expected, suggesting their potential applications in light and electron emission nanodevices.