Electrical and Structural Characterization of Epitaxial-Grown Mg-Doped C60 Thin Films
Electrical and Structural Characterization of Epitaxial-Grown Mg-Doped C60 Thin Films
复制标题
外延生长的掺镁 C60 薄膜的电学和结构表征
DOI：
10.1149/1.3301101
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
M. Yamaguchi
中科院分区：
文献类型：
--
作者：
N. Kojima;M. Natori;M. Yamaguchi
研究了Mg掺杂C60薄膜的外延生长。结果表明，在低Mg浓度区（Mg/C_（60）摩尔比< 1），用云母（001）衬底可以实现Mg掺杂C_（60）薄膜的外延生长。与玻璃衬底上的微晶薄膜相比，外延Mg掺杂C60薄膜的晶体质量得到了显著改善。外延膜中晶体质量的这种急剧改善导致电导率的显著增加。这一结果可能表明载流子迁移率的显著增加。
The epitaxial growth of Mg-doped C60 films has been investigated. It is found that the epitaxial growth of Mg-doped C60 film is enabled by using mica (001) substrate in the low Mg concentration region (Mg/C60 molar ratio < 1). The crystal quality of the epitaxial Mg-doped C60 film is improved drastically in compared with micro-crystalline film on glass substrate. Such drastic improvement of crystal quality in the epitaxial films results significant increase in conductivity. This result may indicate the significant increase of carrier mobility.