Size-dependent properties of ballistic silicon nanowire field effect transistors
Size-dependent properties of ballistic silicon nanowire field effect transistors
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DOI：
10.1063/1.3388324
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发表时间：
2010-06
影响因子：
3.2
通讯作者：
Yeonghun Lee;K. Kakushima;K. Shiraishi;K. Natori;H. Iwai
中科院分区：
文献类型：
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作者：
Yeonghun Lee;K. Kakushima;K. Shiraishi;K. Natori;H. Iwai
采用第一性原理计算方法研究了宽度为0.77 ~ 2.69 nm的沿着[100]方向排列的硅纳米线的子带结构.结合采用Landauer公式的紧凑模型，对弹道硅纳米线场效应晶体管（FET）的导通电流进行了估算，并对尺寸相关性能进行了评估。当载流子简并时，注入速度的大小依赖于从导带边缘测量的费米能级。还假设费米能级在一定的线宽处具有峰值。尽管在依赖于费米能级和注入速度的大小的变化，大的硅纳米线场效应管显示大的导通电流，由于其较大的栅极电容，从较长的周边。在多通道硅纳米线场效应晶体管的情况下的导通电流揭示了纳米线的尺寸依赖的子带结构对性能具有严重的影响。结果表明，虽然归一化导通电流随电流的减小而减小，但其变化规律与实验结果一致。
A study on size-dependent subband structures of silicon nanowires (SiNWs) aligned along [100] direction, ranging from 0.77 to 2.69 nm in width, is performed by the first-principles calculation. Combined with a compact model adopting Landauer’s formula, on-currents of ballistic SiNW field effect transistors (FETs) are estimated and assessment of size-dependent performance is conducted. Size-dependent injection velocity strongly depends on Fermi level measured from the conduction band edge when carriers are degenerate. It is also supposed that the Fermi level has a peak value at a certain wire width. Despite variation in the size-dependent Fermi level and injection velocity, large SiNW FETs show large on-currents owing to their larger gate capacitances resulting from longer periphery. The on-current in the case of a multichannel SiNW FET reveals that size-dependent subband structures of nanowires have a serious effect on performance. As the results, although the normalized on-current decreases with decrease...