Measurements of desorbed products by plasma beam irradiation on SiO2
Measurements of desorbed products by plasma beam irradiation on SiO2
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等离子束照射 SiO2 解吸产物的测量
DOI：
10.1116/1.1795830
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
M. Sekine
中科院分区：
文献类型：
--
作者：
K. Kurihara;Y. Yamaoka;K. Karahashi;M. Sekine
建立了一套等离子体束辐照装置，用于研究反应刻蚀过程中等离子体与表面的相互作用。该装置可以控制等离子体参数，如离子能量、自由基闪烁成分和中性离子通量与离子通量的比率。用C13 F4-Ar混合气体等离子体束分别观察到SiFx（x = 1 - 3）和COFx（x= 1 - 3）的脱附产物。主要解吸产物不是SiF 4。不饱和氟化硅[SiFx（x=1-3）]是富离子氟碳等离子体刻蚀条件下的主要脱附产物。发现在300- 700 eV的离子能量范围内，含硅脱附产物的组成与入射离子能量无关。
A plasma beam irradiation apparatus with a controllable plasma source was constructed to investigate the plasma-surface interactions for reactive etching processes. The apparatus can control the plasma parameters, such as ion energy, radical∕ion composition, and the ratio of neutral to ion flux. The desorbed products of SiFx (x=1–3) were observed separately from COFx (x=1–3) by using a C13F4–Ar gas mixture plasma beam. The major desorbed product was not SiF4. Unsaturated fluorinated silicons [SiFx(x=1–3)] were major desorbed products under ion-rich fluorocarbon plasma etching condition. It was found that the composition of silicon containing desorbed products does not depend on the incident ion energy in the ion energy range of 300–700eV.