Chemical Mechanical Polishing Slurries for Chemically Vapor-Deposited Diamond Films
Chemical Mechanical Polishing Slurries for Chemically Vapor-Deposited Diamond Films
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DOI：
10.1115/1.4024034
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发表时间：
2013-08
影响因子：
4
通讯作者：
Z. Yuan;Zhuji Jin;Youjun Zhang;Q. Wen
中科院分区：
文献类型：
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作者：
Z. Yuan;Zhuji Jin;Youjun Zhang;Q. Wen
基于热力学原理，结合物理和化学性质，研究了化学气相沉积（CVD）金刚石薄膜的化学机械抛光（CMP）浆料。本研究以金刚石碳浆料的机械功、表面能和氧化性作为浆料选择的主要理化指标。研究确定了高铁酸钾、高锰酸钾、三氧化铬和重铬酸钾等10种不同氧化剂的CMP浆料，用于CVD金刚石膜抛光。在CMP工艺之前，使用碳化硼板进行预抛光，以制备具有可接受的表面光洁度和平整度的CVD金刚石膜。用CMP工艺抛光后，用光学显微镜、表面轮廓术、原子力显微镜和x射线光电子能谱检查CVD金刚石膜，以获得表面光洁度和质量、材料去除和机制的信息。研究表明，在10种CMP浆料中，以高铁酸钾为氧化剂的浆料去除率最高，为0.055 mg/h，表面光洁度（Ra = 0.187 nm）和表面质量（无表面划痕和凹坑）最好，高锰酸钾次之。然后讨论了机械应力如何通过在金刚石表面形成“C-O”和“C=O”来促进氧化剂与金刚石的化学氧化。研究表明，化学机械抛光对CVD金刚石薄膜是有效的。
The objective of this study is to investigate slurries for chemical mechanical polishing (CMP) of chemically vapor-deposited (CVD) diamond films based on the principle of thermokinetics combined with physical and chemical properties. The study uses the mechanical work, surface energy and oxidability of a slurry with diamond carbon as the main physical-chemical indicators in selecting the slurries. The study indentifies 10 CMP slurries of different oxidants, such as potassium ferrate, potassium permanganate, chromium trioxide and potassium dichromate, for CVD diamond film polishing. Prior to a CMP process, prepolishing with a boron carbide plate is performed to prepare a CVD diamond film with acceptable surface finish and flatness. After polishing with the CMP process a CVD diamond film is examined with optical microscopy, surface profilometry, atomic force microscopy and X-ray photoelectron spectroscopy for information on surface finish and quality, material removal and mechanisms. The study demonstrates that among the ten CMP slurries, the one with potassium ferrate as an oxidant provides the highest material removal rate of 0.055 mg/hour, and the best surface finish (Ra = 0.187 nm) and surface quality (no surface scratches nor pits), which is followed by potassium permanganate. It then discusses how mechanical stress may promote the chemical oxidation of an oxidant with diamond by forming “C-O” and “C=O” on diamond surface. The study concludes that chemical mechanical polishing is effective for CVD diamond films.