An advanced MOS-IC process technology using local oxidation ot oxygen-doped polysilicon films
An advanced MOS-IC process technology using local oxidation ot oxygen-doped polysilicon films
复制标题
采用局部氧化氧掺杂多晶硅薄膜的先进 MOS-IC 工艺技术
DOI：
10.1109/jssc.1978.1051079
复制
发表时间：
1978
影响因子：
5.4
通讯作者：
D. Ritchie
中科院分区：
文献类型：
--
作者：
T. Yamaguchi;K. Seaward;J. Sachitano;S. Sato;D. Ritchie
直接在硅上沉积的O-POS(掺氧多晶硅)薄膜被局部氧化以形成有源栅极区域。有源栅区的电学特性与传统的p沟道和n沟道MOS器件相同，但场区域对于p型和n型硅衬底都具有极高的阈值电压。研究了金属/氧化O-POS/硅和金属/氧化物/O-POS/硅结构在改变O-POS膜厚度、氧浓度、局部氧化时间和硅衬底电阻率等条件下的电学性质。在这些基础研究的基础上，提出了O-POS薄膜中存在的高密度陷阱中心是导致高场阈值电压的原因。讨论了该工艺技术在硅栅CMOS集成电路和高压n沟道MOS器件中的应用。
An O-POS (oxygen-doped polysilicon) film, deposited directly on silicon, is oxidized locally to create an active gate area. The electrical properties for the active gate area are the same as conventional p- and n-channel MOS devices, but the field area has an extremely high threshold voltage for both p- and n-type silicon substrates. The electrical properties in metal/oxidized O-POS/silicon and metal/oxide/O-POS/silicon structures have been investigated while varying the O-POS film thickness, oxygen concentration, local oxidation time, and silicon substrate resistivity. According to these basic studies, it is proposed that the high density of trapping centers existing in O-POS film is responsible for the high field threshold voltage. A applications of this process technology, a silicon-gate CMOS integrated circuit, and a high voltage n-channel MOS device are discussed.