Defect states and their energetic position and distribution in organic molecular semiconductors
Defect states and their energetic position and distribution in organic molecular semiconductors
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DOI：
10.1063/1.4801636
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发表时间：
2013-04
影响因子：
4
通讯作者：
Akanksha Sharma;Sarita Yadav;Pramod Kumar;S. Chaudhuri;Subhasis Ghosh
中科院分区：
文献类型：
--
作者：
Akanksha Sharma;Sarita Yadav;Pramod Kumar;S. Chaudhuri;Subhasis Ghosh
利用电容光谱技术研究了并五苯和酞菁铜中结构无序引起的缺陷态的能量位置和分布。它已被证明，电容-频率和电容-电压特性表现出高斯分布的陷阱与充满活力的位置在约0.5 eV以上的并五苯和CuPc的最高占据分子轨道水平。这些陷阱已通过不同的生长条件和几乎相同的陷阱参数并五苯和铜酞菁表明，类似的结构紊乱是负责这些陷阱。
Energetic position and distribution of defect states due to structural disorder in pentacene and copper phthalocyanine have been obtained by capacitance based spectroscopic techniques. It has been shown that capacitance-frequency and capacitance-voltage characteristics exhibit Gaussian distribution of traps with an energetic position at around 0.5 eV above the highest occupied molecular orbital level of the pentacene and CuPc. These traps have been created by varying growth conditions and almost identical trap parameters in pentacene and copper phthalocyanine indicate that similar structural disorder is responsible for these traps.