Mechanism of Fermi-level stabilization in semiconductors.
Mechanism of Fermi-level stabilization in semiconductors.
复制标题
半导体费米能级稳定机制。
DOI：
10.1103/physrevb.37.4760
复制
发表时间：
1988
期刊：
影响因子：
--
通讯作者：
Walukiewicz
中科院分区：
文献类型：
--
作者：
Walukiewicz
本文提出了严重辐照损伤半导体中费米能级与金属-半导体界面处费米能级之间的显著相关性。相关性提供了支持肖特基势垒形成的缺陷模型的关键证据。两种情况下的费米能级能量对应于sp/sup 3/杂化的平均能量。以GaAs为例，详细描述了由两性悬键缺陷引起的费米能级稳定
A striking correlation between the Fermi-level in heavily radiation damaged semiconductors and at metal-semiconductor interfaces is presented. The correlation provides critical evidence supporting the defect model for Schottky-barrier formation. The Fermi-level energy for both situations corresponds to the average energy of the sp/sup 3/ hybrid. In the case of GaAs, a detailed description of the Fermi-level stabilization caused by amphoteric dangling-bond-like defects is given