Advanced Nanoanalysis of High-k Dielectric Stacks
Advanced Nanoanalysis of High-k Dielectric Stacks
复制标题
高 k 电介质叠层的高级纳米分析
DOI：
--
复制
发表时间：
2006
期刊：
影响因子：
--
通讯作者：
S. Gendt
中科院分区：
文献类型：
--
作者：
M. Mackenzie;A. Craven;D. McComb;S. Gendt
分析电子显微镜技术被用来调查元素分布在高k电介质叠层与金属栅极。Si（100）/SiO2/HfO 2 /TiN和Si（100）/SiO2/HfO 2 /TiN/poly-Si栅叠层的电子能量损失谱结果表明，TiN/poly-Si界面和HfO 2 /TiN界面可能发生了界面反应。由于界面反应可能主导此类系统的功函数行为，因此该技术提供了独特的能力来提高对电观察到的功函数行为的理解。
Analytical electron microscopy techniques are used to investigate elemental distributions across high-k dielectric stacks with metal gates. Electron energy-loss spectroscopy results from Si(100)/SiO 2 /HfO 2 /TiN and Si(100)/SiO 2 /HfO 2 /TiN/poly-Si gate stacks show evidence of interface reactions having occurred at the TiN/poly-Si interface and possibly at the HfO 2 /TiN interfaces. As interface reactions are likely to dominate the work function behavior of such systems, this technique offers unique capabilities to improve understanding of the work function behavior observed electrically.