Reduction of plasma-induced damage in SiO2 films during pulse-time-modulated plasma irradiation
Reduction of plasma-induced damage in SiO2 films during pulse-time-modulated plasma irradiation
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脉冲时间调制等离子体辐照期间减少 SiO2 薄膜中等离子体引起的损伤
DOI：
10.1116/1.1861033
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发表时间：
2005
影响因子：
1.4
通讯作者：
S. Yamasaki
中科院分区：
文献类型：
--
作者：
Y. Ishikawa;M. Okigawa;S. Samukawa;S. Yamasaki
使用脉冲时间调制（TM）等离子体是减少SiO2膜中的真空紫外（VUV）辐射损伤的有效方式，因为这样的等离子体可以减少高能电子的量，同时在TM等离子体的关断时间期间保持电子密度。为了了解真空紫外辐射的影响，我们测量了真空紫外感应电流在二氧化硅薄膜使用一个简单的晶圆上的监测技术。我们发现SiO2薄膜中的等离子体感生电流强烈依赖于真空紫外光子能量。在相同条件下，SiO2薄膜中的E′心密度也与光子能量有关。也就是说，通过晶片上监测检测到的SiO2膜中的等离子体感生电流对应于膜中的E′中心（悬挂键）的密度。通过使用TM等离子体，在等离子体关断时间期间，等离子体感生电流和SiO2膜中的E′中心密度可以降低。因此，TM等离子体的使用可以消除VUV辐射损伤。这些结果也证实了我们的…
Use of a pulse-time-modulated (TM) plasma is an effective way to reduce vacuum ultra-violet (VUV) radiation damage in SiO2 films because such a plasma can reduce the quantity of high-energy electrons while maintaining the electron density during the off time of the TM plasma. To understand the effects of VUV radiation, we measured the VUV-induced current in SiO2 films using a simple on-wafer monitoring technique. We found that the plasma-induced-current in the SiO2 films strongly depended on the VUV photon energy. Under the same conditions, the density of E′ centers in SiO2 films also depended on the photon energy. That is, the plasma-induced currents in the SiO2 films detected by on-wafer monitoring corresponded to the density of E′ centers (dangling bonds) in the films. By using a TM plasma, the plasma-induced current and the E′ center density in SiO2 films can be reduced during the plasma-off time. Consequently, use of a TM plasma can eliminate VUV radiation damage. These results also confirm that our ...