Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co2Fe(Ge0.5Ga0.5) Heusler alloy and NiAl spacer
Crystal orientation dependence of band matching in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co2Fe(Ge0.5Ga0.5) Heusler alloy and NiAl spacer
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DOI：
10.1063/1.4915481
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发表时间：
2015-04
影响因子：
3.2
通讯作者：
Jiamin Chen;T. Furubayashi;Y. Takahashi;T. Sasaki;K. Hono
中科院分区：
文献类型：
--
作者：
Jiamin Chen;T. Furubayashi;Y. Takahashi;T. Sasaki;K. Hono
We have experimentally investigated the crystal orientation dependence of band matching in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo-spin-valves using Co2Fe(Ge0.5Ga0.5) (CFGG) Heusler alloy ferromagnetic layer and NiAl spacer. The high quality epitaxial CFGG/NiAl/CFGG all-B2-trilayers structure devices were fabricated on both MgO(001) and sapphire (112¯0) single crystal substrates to create (001) and (110) crystal orientations. Same magneto-transport properties were observed from these two differently orientated devices indicating that there is no or little orientation dependence of band matching on MR output. We also found that all-B2-trilayer structure was free of lattice matching influence depending on the crystal orientation, which made it a good candidate for CPP-GMR device.
