Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation
Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation
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DOI：
10.1364/ol.500391
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Jichun Ye
中科院分区：
文献类型：
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作者：
Chenyu Guo;Jiaxin Zhang;Shihong Xia;Liqiong Deng;Kunzi Liu;Zhenhai Yang;Bin Cheng;Biplab Sarkar;Wei Guo;Jichun Ye
Solid-state self-powered UV detection is strongly required in various application fields to enable long-term operation. However, this requirement is incompatible with conventionally used metal-semiconductor-metal (MSM) UV photodetectors (PDs) due to the symmetric design of Schottky contacts. In this work, a self-powered MSM solar-blind UV-PD was realized using a lateral pn junction architecture. A large built-in electric field was obtained in the MSM-type UV-PD without impurity doping, leading to efficiency carrier separation and enhanced photoresponsivity at zero external bias. The solar-blind UV-PD exhibits a cutoff wavelength of 280 nm, a photo/dark current ratio of over 105, and a responsivity of 425.13 mA/W at -10 V. The mechanism of self-powered UV photodetection was further investigated by TCAD simulation of the internal electric field and carrier distributions.
