Silicon rib waveguide electro-absorption optical modulator using transparent conductive oxide bilayer
Silicon rib waveguide electro-absorption optical modulator using transparent conductive oxide bilayer
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DOI：
10.7567/jjap.55.042201
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发表时间：
2016-04-01
影响因子：
1.5
通讯作者：
Tanemura, Takuo
中科院分区：
文献类型：
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作者：
Ayata, Masafumi;Nakano, Yoshiaki;Tanemura, Takuo
我们提出了一种新型的基于硅脊形波导的超紧凑电吸收光调制器，并数值证明了其性能。所提出的设计采用两种类型的透明导电氧化物（TCO）层具有不同的载流子密度，以实现高调制效率和低光插入损耗。具有高载流子密度的薄TCO层使得能够通过金属氧化物半导体结构进行有效调制。另一方面，具有低载流子密度的上部TCO层允许顶部电极的低电阻电接触，而没有大的光学损耗。使用铟锡氧化物双层优化的载流子密度，我们数值模拟表明，4.3 dB的消光比和2.6 dB的光插入损耗与1 μ m的设备长度。我们估计，调制器工作在1.3V的低驱动电压下，表现出22.5 fJ/bit的超低能耗和超过40 GHz的宽RC调制带宽。(C)2016日本应用物理学会
We propose a novel ultra compact electro-absorption optical modulator based on a silicon rib waveguide and numerically demonstrate its performance. The proposed design employs two types of transparent conductive oxide (TCO) layers with different carrier densities to achieve both high modulation efficiency and low optical insertion loss. The thin TCO layer with high carrier density enables efficient modulation through the metal-oxide-semiconductor structure. On the other hand, the upper TCO layer with low carrier density allows low-resistance electrical contact for the top electrode without large optical loss. Using an indium tin oxide bilayer with optimized carrier densities, we numerically demonstrate a 4.3 dB extinction ratio and a 2.6 dB optical insertion loss with 1 mu m device length. We estimate that the modulator operates under a low driving voltage of 1.3V, exhibiting an ultra low energy consumption of 22.5 fJ/bit and a broad RC modulation bandwidth of over 40 GHz. (C) 2016 The Japan Society of Applied Physics