Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
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DOI：
10.1063/5.0126698
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发表时间：
2022-12-26
影响因子：
4
通讯作者：
Ahmadi, Elaheh
中科院分区：
文献类型：
--
作者：
Oshima, Yuichi;Ahmadi, Elaheh
超宽带隙（UWBG）半导体材料，如Ga 2 O3和金刚石，由于其具有比SiC和GaN更高的击穿电压和更低的导通电阻，因此受到越来越多的关注。在众多的UWBG半导体中，这项工作的重点是刚玉结构的α-Ga 2 O 3，这是Ga 2 O 3的亚稳态多晶型物。5.3 eV的大带隙能量、能带工程中的大自由度以及形成异质p-n结的同晶p型氧化物的可用性使得α-Ga 2 O3成为功率器件应用的有吸引力的候选者。有前途的初步原型器件结构已被证明没有先进的边缘终端，尽管在外延层中的位错密度高，由于没有本地衬底和晶格匹配的外来衬底。在这个角度来看，我们提出了一个研究和开发的α-镓氧化物的功率器件应用的概述，并讨论未来的研究方向。
Ultra-wide-bandgap (UWBG) semiconductors, such as Ga2O3 and diamond, have been attracting increasing attention owing to their potential to realize high-performance power devices with high breakdown voltage and low on-resistance beyond those of SiC and GaN. Among numerous UWBG semiconductors, this work focuses on the corundum-structured alpha-Ga2O3, which is a metastable polymorph of Ga2O3. The large bandgap energy of 5.3 eV, a large degree of freedom in band engineering, and availability of isomorphic p-type oxides to form a hetero p-n junction make alpha-Ga2O3 an attractive candidate for power device applications. Promising preliminary prototype device structures have been demonstrated without advanced edge termination despite the high dislocation density in the epilayers owing to the absence of native substrates and lattice-matched foreign substrates. In this Perspective, we present an overview of the research and development of alpha-Ga2O3 for power device applications and discuss future research directions.