Excitonic emission on CuInS2 epitaxial films by pulse laser deposition
Excitonic emission on CuInS2 epitaxial films by pulse laser deposition
复制标题
脉冲激光沉积 CuInS2 外延薄膜的激子发射
DOI：
10.1002/pssc.201400352
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Yong-Gu Shim and Kazuki Wakita
中科院分区：
文献类型：
--
作者：
Ryo Yoshida;Tseng Po-Han;Yong-Gu Shim and Kazuki Wakita
采用脉冲激光沉积法，在500 ºC的温度下，在GaAs衬底上沉积了CuInS 2外延薄膜。对所有薄膜拍摄表面和横截面扫描电子显微镜（SEM）图像，厚度估计为0.5 - 1 μm。X射线衍射（XRD）和拉曼散射证实了薄膜的黄铜矿结构。对于由能量密度为0.8 J/cm 2的脉冲沉积的膜，使用光致发光（PL）观察到在77 K下的自由激子和束缚激子发射。激子发射仅出现在PL-强度映射中的特定点处。此外，与激子发射的点的Cu和In的组成比被发现是非常接近于统一相比，其他地区没有排放。（© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Thin films of epitaxial CuInS2were deposited on a GaAs substrate at a temperature of 500 ºC by the pulse‐laser‐deposition method. Surface and cross‐section scanning electron microscopy (SEM) images were taken for all the films, with thicknesses estimated to range between 0.5‐1 μm. X‐ray diffraction (XRD) and Raman scattering confirmed the chalcopyrite structure of the films. For a film deposited by a pulse of energy density 0.8 J/cm2, free exciton and bound exciton emissions at 77 K were observed using photoluminescence (PL). The exciton emissions appear only at specific points in a PL‐intensity mapping. In addition, for the points with excitonic emission the composition ratio of the Cu and In was found to be very close to unity compared to other areas without emissions. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)