Ohmic contacts on p-GaN (Part II):
Ohmic contacts on p-GaN (Part II):
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p-GaN 上的欧姆接触（第二部分）：
DOI：
10.1016/s1369-8001(00)00177-3
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发表时间：
2001
影响因子：
4.1
通讯作者：
R. Schmid
中科院分区：
文献类型：
--
作者：
R. Wenzel;G. Fischer;R. Schmid
研究了 p-GaN 上的 Pd、Ni/Au、Cr/Au、Co/Au、Pt 和 Au 触点在低于和高于 500°C 回火后退火后接触电阻率和 I-V 曲线线性的变化。 p-GaN 上的 CTLM 分层结构进行了热应力和电学分析。作为欧姆行为度量的 I-V 曲线线性度是从 I-V 曲线的相关系数得出的。低于 500°C 时，Pd、Ni/Au、Cr/Au 和 Co/Au 触点在退火后会变成欧姆性。退火后比接触电阻ρc的最佳最终值按Ni/Au、Pd、Co/Au、Cr/Au、Au和Pt的顺序增加。在 500°C 以上退火后，所有触点材料的接触电阻都会增加，并且线性度会降低。界面处反应相的形成与 p-GaN 外延层分解之间的竞争是这种行为的可能原因。
The changes in contact resistivity and I–V curve linearity after annealing of Pd, Ni/Au, Cr/Au, Co/Au, Pt and Au contacts on p-GaN after tempering below and above 500°C have been investigated. CTLM-layered structures on p-GaN were thermally stressed and electrically analyzed. The I–V curve linearity as a measure of ohmic behavior has been derived from the correlation coefficient of the I–V curves. Below 500°C the Pd, Ni/Au, Cr/Au and Co/Au contacts become ohmic after annealing. The best final values of the specific contact resistance ρcafter annealing increase in the sequence Ni/Au, Pd, Co/Au, Cr/Au, Au and Pt. After annealing above 500°C the contact resistance increases for all contact materials and the linearity decreases. A competition between the formation of reaction phases at the interface and the decomposition of the p-GaN epi-layer is a probable reason for this behavior.