Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) Surface
Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) Surface
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Ga 吸附物与氢封端 Si(100) 表面上悬挂键的相互作用
DOI：
10.1143/jjap.35.l1085
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发表时间：
1996
影响因子：
1.5
通讯作者：
Y. Wada
中科院分区：
文献类型：
--
作者：
T. Hashizume;S. Heike;M. Lutwyche;Satoshi Watanabe;K. Nakajima;T. Nishi;Y. Wada
用扫描隧道显微镜（STM）研究了Ga在Si（100）-2 1-H表面的吸附.我们已经发现，热沉积的Ga原子优先吸附在氢缺失的悬挂键和表面杂质上。我们通过STM电流解吸氢原子，并以与Lyding等人[Appl. Phys. Lett. 64（1994）2010]。为了制造更详细的悬挂键结构，测试了几种操纵（分离，附着和移动）单个氢原子的方法。我们能够热存款镓原子上悬挂键合线和制造原子级的Ga线上的Si表面。
Adsorption of Ga on the hydrogen terminated Si(100)–2×1–H surface has been investigated by scanning tunneling microscopy (STM). We have found that the thermally deposited Ga atoms preferentially adsorb on the hydrogen-missing dangling bonds and on the surface impurities. We desorb hydrogen atoms by the STM current and fabricate atomic-scale dangling-bond wires, in the similar way as was reported by Lyding et al. [Appl. Phys. Lett. 64 (1994) 2010]. In order to fabricate more detailed dangling bond structures, several methods of manipulating (detaching, attaching and moving) the individual hydrogen atoms are tested. We are able to thermally deposit Ga atoms on a dangling-bond wire and fabricate an atomic-scale Ga wire on the Si surface.