Growth Mechanism of Ru Films Prepared by Chemical Vapor Deposition Using Bis(ethylcyclopentadienyl)ruthenium Precursor
Growth Mechanism of Ru Films Prepared by Chemical Vapor Deposition Using Bis(ethylcyclopentadienyl)ruthenium Precursor
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双乙基环戊二烯基钌前驱体化学气相沉积法制备Ru薄膜的生长机理
DOI：
10.1149/1.1340916
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发表时间：
2001
影响因子：
--
通讯作者：
S. Kimura
中科院分区：
文献类型：
--
作者：
Y. Matsui;M. Hiratani;T. Nabatame;Y. Shimamoto;S. Kimura
以液态双(乙基环戊二烯)Ru为前驱体，在氧化性气氛中用化学气相沉积法制备了Ru薄膜，并用氧比解释了Ru薄膜的生长机理。在生长之前，存在较长的孵化时间，随着生长温度和氧气比的增加，孵化时间缩短。随着孵化时间的延长，Ru薄膜随沉积时间的增加呈线性增长，主导前驱体分解的速率控制过程随比例的变化而变化。在1.3%的低比下，薄膜厚度与热分解的对数比成正比增长，激活能为1.9 eV时，薄膜的生长过程占主导地位。另一方面，在氧气供应充足且膜厚不依赖于比的25%的高比例下，氧化分解占主导地位，活化能降至0.4 eV。我们认为，反应限制过程是氧供应限制过程的结果，该过程基于氧在生长的Ru薄膜表面上的解离化学吸附。版权所有。
Ruthenium thin films were prepared by chemical vapor deposition using a liquid bis (ethylcyclopentadienyl) ruthenium precursor in an oxidizing atmosphere, and their growth mechanism is explained in terms of oxygen ratio. Before growth, a long incubation time exists and is shortened by increasing growth temperature and oxygen ratio. Following the incubation time, the Ru film grows linearly with increasing deposition time, and the rate-determining process dominating the precursor decomposition changes according to ratio. At a low ratio of 1.3%, at which film thickness increases in proportion to logarithmic ratio of thermal decomposition with an activation energy of 1.9 eV dominates the growth process. On the other hand, at a high ratio of 25%, at which sufficient oxygen gas is supplied and film thickness does not depend on ratio, oxidative decomposition becomes dominant and activation energy decreases to 0.4 eV. We propose that the reaction-limited process results from the oxygen-supply-limited process, which is based on dissociative chemisorption of oxygen on the growing Ru film surface.© 2001 The Electrochemical Society. All rights reserved.