Structure and thermophysical properties of GaN films deposited by reactive sputtering using a metal Ga target
Structure and thermophysical properties of GaN films deposited by reactive sputtering using a metal Ga target
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使用金属Ga靶反应溅射沉积GaN薄膜的结构和热物理性质
DOI：
10.1116/1.4985182
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Y. Shigesato
中科院分区：
文献类型：
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作者：
Yuji Isosaki;Yuichiro Yamashita;T. Yagi;J. Jia;N. Taketoshi;Shin‐ichi Nakamura;Y. Shigesato
研究了位错密度和杂质对c面蓝宝石衬底上外延GaN薄膜热导率的影响。使用Ga金属靶以及Ar和N2混合气体，通过反应直流磁控溅射制备了标称厚度为100、300和1500nm的GaN薄膜。还使用 Ar-N2-H2 混合气体制备了 300 nm 厚的 GaN 薄膜。对于所有 300 纳米和 1500 纳米厚的薄膜，从极图中的六重对称点和选定区域的电子衍射图案证实了外延生长。这些薄膜的 GaN(0002) 摇摆曲线显示出沿 c 轴的高度定向生长。从 GaN( 10 1 ¯ 0) 的摇摆曲线推导出的位错密度范围为 1011 至 1012 cm−2。在使用Ar-N2混合气体的情况下，薄膜在靠近基板的厚度约为50-100nm的层中含有1022个原子cm−3数量级的O和H杂质，并且在或...
The influence of dislocation density and impurities on the thermal conductivity of epitaxial GaN thin films on c-plane sapphire substrates was studied. GaN thin films with nominal thicknesses of 100, 300, and 1500 nm were fabricated by reactive direct current magnetron sputtering using a Ga metal target and a mixture gas of Ar and N2. A 300-nm-thick GaN film was also fabricated using a mixture gas of Ar–N2–H2. For all the 300- and 1500-nm-thick films, epitaxial growth was confirmed from the sixfold symmetry spots in the pole figure and selected area electron diffraction patterns. Rocking curves of GaN(0002) of these films showed highly oriented growth along the c-axis. The dislocation density deduced from the rocking curves of GaN( 10 1 ¯ 0) ranged from 1011 to 1012 cm−2. In the cases where a mixture gas of Ar–N2 was used, films included O and H impurities on the order of 1022 atoms cm−3 in a layer of approximately 50–100 nm thickness near the substrate, and a low-impurity region with impurities on the or...