A nitrogen dioxide sensor based on an organic transistor constructed from amorphous semiconducting polymers
A nitrogen dioxide sensor based on an organic transistor constructed from amorphous semiconducting polymers
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DOI:
10.1002/adma.200701504
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发表时间:
2007-11-19
影响因子:
29.4
通讯作者:
Turner, Michael L.
中科院分区:
文献类型:
--
作者:
Das, Arindam;Dost, Rene;Turner, Michael L.
Organic field effect transistors based on amorphous semiconducting polymers are used as highly effective sensors for the detection of low concentrations of NO2. The figure shows the experimental setup used to detect the toxic odor. The threshold voltage rather than the charge carrier mobility is seen to be greatly modified by exposure to NO2.