Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry
Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry
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DOI：
10.1063/1.4883228
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发表时间：
2014-06
影响因子：
4
通讯作者：
B. Villis;A. Orlov;S. Barraud;M. Vinet;M. Sanquer;P. Fay;G. Snider;X. Jehl
中科院分区：
文献类型：
--
作者：
B. Villis;A. Orlov;S. Barraud;M. Vinet;M. Sanquer;P. Fay;G. Snider;X. Jehl
晶体管的不断缩小导致纳米级器件需要越来越少的带电载流子来进行操作。最终的电荷控制器件，单电子晶体管（SET），控制单个电子的转移。它也是最灵敏的静电计，因此通过它的电子传输会受到附近电荷的显著影响。然而，标准的直流表征技术通常不能明确地检测和解决由电容耦合陷阱的电荷状态的变化引起的SET行为中所观察到的变化的起源。使用射频（RF）反射技术，我们能够明确地检测到这个过程中，在非常接近的陷阱的占领概率建模协议。
The continuous downscaling of transistors results in nanoscale devices which require fewer and fewer charged carriers for their operation. The ultimate charge controlled device, the single-electron transistor (SET), controls the transfer of individual electrons. It is also the most sensitive electrometer, and as a result the electron transport through it can be dramatically affected by nearby charges. Standard direct-current characterization techniques, however, are often unable to unambiguously detect and resolve the origin of the observed changes in SET behavior arising from changes in the charge state of a capacitively coupled trap. Using a radio-frequency (RF) reflectometry technique, we are able to unequivocally detect this process, in very close agreement with modeling of the trap's occupation probability.