High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
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DOI：
10.1063/1.2353811
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发表时间：
2006-09-11
影响因子：
4
通讯作者：
Hosono, Hideo
中科院分区：
文献类型：
--
作者：
Yabuta, Hisato;Sano, Masafumi;Hosono, Hideo
采用射频磁控溅射法在室温下制备了非晶铟镓锌氧化物（a-IGZO）沟道薄膜晶体管（TFT）。通过改变溅射气体的混合比，O-2/（O-2+Ar），从近似3.1%到3.7%，将a-IGZO膜的电导率控制在近似10（-3）到10（-6）S cm（-1）。顶栅型TFT以n型增强模式工作，场效应迁移率为12 cm（2）V-1 s（-1），开关电流比类似于10（8），亚阈值栅极电压摆幅为0.2 V decade（-1）。它表明，a-IGZO是一种合适的半导体材料，以生产高迁移率TFT在低温下适用于柔性基板的生产兼容的手段。(c)2006年，美国物理学会。
Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. The conductivity of the a-IGZO films was controlled from similar to 10(-3) to 10(-6) S cm(-1) by varying the mixing ratio of sputtering gases, O-2/(O-2+Ar), from similar to 3.1% to 3.7%. The top-gate-type TFTs operated in n-type enhancement mode with a field-effect mobility of 12 cm(2) V-1 s(-1), an on-off current ratio of similar to 10(8), and a subthreshold gate voltage swing of 0.2 V decade(-1). It is demonstrated that a-IGZO is an appropriate semiconductor material to produce high-mobility TFTs at low temperatures applicable to flexible substrates by a production-compatible means. (c) 2006 American Institute of Physics.