Density multiplication and improved lithography by directed block copolymer assembly
Density multiplication and improved lithography by directed block copolymer assembly
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DOI：
10.1126/science.1157626
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发表时间：
2008-08-15
期刊：
影响因子：
56.9
通讯作者：
Nealey, Paul F.
中科院分区：
文献类型：
--
作者：
Ruiz, Ricardo;Kang, Huiman;Nealey, Paul F.
自组装材料自发地形成纳米技术中感兴趣的长度尺度的结构。在嵌段共聚物的特定情况下，自组装的热力学驱动力很小，并且低能缺陷可以容易地被捕获。我们在化学图案化的表面上以高达每平方英寸1太比特的密度指导了隔离嵌段共聚物域的无缺陷阵列的组装。在将组装的结构与化学图案进行比较时，密度增加了四倍，尺寸减小了两倍，并且尺寸均匀性大大提高。
Self-assembling materials spontaneously form structures at length scales of interest in nanotechnology. In the particular case of block copolymers, the thermodynamic driving forces for self- assembly are small, and low- energy defects can get easily trapped. We directed the assembly of defect- free arrays of isolated block copolymer domains at densities up to 1 terabit per square inch on chemically patterned surfaces. In comparing the assembled structures to the chemical pattern, the density is increased by a factor of four, the size is reduced by a factor of two, and the dimensional uniformity is vastly improved.