Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman (VB) method
Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman (VB) method
复制标题
DOI：
10.1016/j.physb.2007.08.206
复制
发表时间：
2007-12
影响因子：
2.8
通讯作者：
T. Taishi;T. Hayashi;N. Bamba;Y. Ohno;I. Yonenaga;K. Hoshikawa
中科院分区：
文献类型：
--
作者：
T. Taishi;T. Hayashi;N. Bamba;Y. Ohno;I. Yonenaga;K. Hoshikawa
研究了垂直布里奇曼(VB)法生长的La3+Ga5+SiO4+(LGS)单晶中与氧等杂质有关的缺陷。在Ar气氛中生长的LGS晶体的电阻率比在空气中生长的高一个数量级。然而，在空气中退火后，它下降到与在空气中生长的LGS晶体相同的水平。光学透射谱的结果表明，在空气和Ar气氛中生长的LGS晶体在500 nm附近有一个宽的吸收峰，对应的能级为2.5 eV。由于VB生长的LGS晶体是p型的，在VB-LGS晶体中，作为受主的是多余的间隙氧原子，而不是氧空位。
Defects related to oxygen and other impurities in piezoelectric langasite (La{sub 3}Ga{sub 5}SiO{sub 14}; LGS) single crystals grown by the vertical Bridgman (VB) method was investigated. The resistivity of an LGS crystal grown in an Ar atmosphere was about one-order higher than that grown in air. However, after annealing in air it decreased to the same level as that of LGS crystal grown in air. The results of optical transmission spectra showed a broad adsorption peak around 500 nm, corresponding to 2.5 eV of energy level, in LGS crystals grown in air and grown in an Ar atmosphere. Since VB-grown LGS crystal was p-type, excess interstitial oxygen atoms, not oxygen vacancies, operate as an acceptor in the VB-LGS crystal.