Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
复制标题
DOI：
10.1063/1.1579852
复制
发表时间：
2003-05
影响因子：
4
通讯作者：
S. Karmalkar;D. M. Sathaiya;M. Shur
中科院分区：
文献类型：
--
作者：
S. Karmalkar;D. M. Sathaiya;M. Shur
AlGaN/GaN 高电子迁移率晶体管中的断态栅极电流由两条平行的栅极到衬底隧道路径产生：一条直接路径和一条通过深陷阱的路径，深陷阱分布在整个 AlGaN 层并分布在能带上。给出了计算该电流的模型，该模型表明，在 T∼500 K 以下，陷阱辅助隧道效应占主导地位，而直接隧道效应（热电子场发射）在较高温度下占主导地位。与实验结果拟合的模型产生以下制造工艺敏感参数：陷阱浓度为∼1013–1015 cm−3，陷阱带宽为势垒高度的∼50%–70%，位于导带边缘下方0.4–0.55 V。
The off-state gate current in AlGaN/GaN high electron mobility transistors is shown to arise from two parallel gate to substrate tunneling paths: a direct path, and a path via deep traps, which are distributed throughout the AlGaN layer and spread over an energy band. A model to calculate this current is given, which shows that trap-assisted tunneling dominates below T∼500 K, and direct tunneling (thermionic field emission) dominates at higher temperatures. A model fit to experimental results yields the following fabrication process sensitive parameters: trap concentration of ∼1013–1015 cm−3, and trap bandwidth of ∼50%–70% of the barrier height located 0.4–0.55 V below the conduction band edge.