Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1−xN/GaN Quantum Wells

Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1−xN/GaN Quantum Wells
复制标题

DOI:
10.1103/physrevapplied.7.064033
复制
发表时间:
2017-06
影响因子:
4.6
通讯作者:
R. Ivanov;S. Marcinkevičius;M. Mensi;O. Martínez;L. Kuritzky;Daniel J. Myers;S. Nakamura;J. Speck
R. Ivanov;S. Marcinkevičius;M. Mensi;O. Martínez;L. Kuritzky;Daniel J. Myers;S. Nakamura;J. Speck
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
R. Ivanov;S. Marcinkevičius;M. Mensi;O. Martínez;L. Kuritzky;Daniel J. Myers;S. Nakamura;J. Speck

文献摘要

被引文献

相似文献

我们提出了一种偏振,光谱和空间分辨的近场光致发光(PL)测量技术,并将其应用于宽m面In xGa 1-xN/GaN量子威尔斯阱生长的研究。
We present a polarization, spectrally, and spatially resolved near-field photoluminescence (PL) measurement technique and apply it to the study of wide m-plane InxGa1-xN/GaN quantum wells grown on ...