Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1−xN/GaN Quantum Wells
Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1−xN/GaN Quantum Wells
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DOI:
10.1103/physrevapplied.7.064033
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发表时间:
2017-06
影响因子:
4.6
通讯作者:
R. Ivanov;S. Marcinkevičius;M. Mensi;O. Martínez;L. Kuritzky;Daniel J. Myers;S. Nakamura;J. Speck
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文献类型:
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作者:
R. Ivanov;S. Marcinkevičius;M. Mensi;O. Martínez;L. Kuritzky;Daniel J. Myers;S. Nakamura;J. Speck
We present a polarization, spectrally, and spatially resolved near-field photoluminescence (PL) measurement technique and apply it to the study of wide m-plane InxGa1-xN/GaN quantum wells grown on ...