Mechanical analysis of organic flexible devices by finite element calculation
Mechanical analysis of organic flexible devices by finite element calculation
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DOI：
10.1002/pssa.201330151
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发表时间：
2014-04-01
影响因子：
2
通讯作者：
Kudo, Kazuhiro
中科院分区：
文献类型：
--
作者：
Sakai, Masatoshi;Yamazaki, Yota;Kudo, Kazuhiro
近年来，有机柔性器件得到了广泛的研究，并且通过将晶体管的有源层放置在中性应变表面上，已经实现了有机薄膜器件的亚毫米弯曲稳定性。在中性应变表面周围，有机薄膜具有高的弯曲耐久性，因为面内拉伸应变和压缩应变彼此抵消。然而，这种类型的高柔性器件在经受硬弯曲时也会被破坏或经历不可逆的退化，并且断裂点非常难以通过实验检测。因此，我们对柔性器件进行了有限元分析，并在接触电极和有机层之间的边界处发现了可能的断裂点。这是由于有机半导体和Au的杨氏模量的差异导致的边界处的应变集中的结果。此外，剪切应力集中在Au电极的边缘周围。这些结果表明，这种类型的柔性晶体管最可能的断裂点是有机层在与Au电极的界面处的破裂。
In recent years, organic flexible devices have been investigated extensively and sub-millimeter bending stability of organic thin film devices has been achieved by placing the active layer of the transistor on a neutral strain surface. Around the neutral strain surface, an organic thin film has a high bending durability because the in-plane tensile and compressive strain cancel each other. However, this type of highly flexible device is also destroyed or undergoes irreversible degradation when subjected to hard bending, and the breaking point is very difficult to detect experimentally. Therefore, we performed a finite element analysis of a flexible device and found a possible breaking point at the boundary between the contact electrode and the organic layer. This was the result of a strain concentration at the boundary due to the difference in Young's modulus of the organic semiconductor and Au. In addition, the shear stress is concentrated around the edge of the Au electrode. These results indicate that the most likely breaking point for this type of flexible transistor is a rupture of the organic layer at the interface with the Au electrode.