An analytical fringe capacitance model for interconnects using conformal mapping
An analytical fringe capacitance model for interconnects using conformal mapping
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DOI：
10.1109/tcad.2006.882489
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发表时间：
2006-12-01
影响因子：
2.9
通讯作者：
Roy, Kaushik
中科院分区：
文献类型：
--
作者：
Bansal, Aditya;Paul, Bipul C.;Roy, Kaushik
提出了一种利用保角映射技术计算不同层中两个非重叠互连线之间边缘电容的解析模型。通过这种技术，电场线被几何近似以单独地对不同的电容分量进行建模。最后，将这些分量组合以获得等效边缘电容。使用上述技术，开发了一个模型来计算典型的互连几何形状的电容，使用技术相关的参数。该模型与FASTCAP结果吻合较好，显著降低了互连线电容的计算复杂度和计算时间。
An analytical model is proposed to compute the fringe capacitance between two nonoverlapping interconnects in different layers using a conformal mapping technique. With this technique, electric field lines are geometrically approximated to separately model the different capacitive components. These components are finally combined to obtain the equivalent fringe capacitance. Using the aforementioned technique, a model was developed to compute the capacitances of typical interconnect geometries using technology-dependent parameters. The proposed model closely matches with FASTCAP results and significantly reduces the computational complexity and time in calculating the interconnect capacitances.