Visible room-temperature photoluminescence of Ge-doped SiO2 glasses fabricated by a sol–gel process
Visible room-temperature photoluminescence of Ge-doped SiO2 glasses fabricated by a sol–gel process
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DOI：
10.1016/j.optmat.2005.11.011
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发表时间：
2007-02
影响因子：
3.9
通讯作者：
Heqing Yang;X. Yao;Xingjun Wang;Xiaoxiao Gu;Fujian Wang
中科院分区：
文献类型：
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作者：
Heqing Yang;X. Yao;Xingjun Wang;Xiaoxiao Gu;Fujian Wang
以硅酸乙酯（Si（OC 2 H5）4）和3-三锗丙酸（Cl 3GeCH 2CH 2COOH）为原料，采用溶胶-凝胶法制备了Ge掺杂SiO2玻璃。在Ar ~+激光514.5nm激发下，Ge掺杂SiO_2玻璃在585和654 nm处有较强的室温光致发光。光致发光谱的峰位与Ge/Si比有微弱的依赖关系。光致发光强度随着Ge/Si比的增加而急剧增加。采用X射线衍射、X射线光电子能谱和透射电子显微镜对Ge掺杂SiO2凝胶玻璃进行了表征。结果表明，Ge原子在凝胶玻璃中以非晶态GeO 2粒子的形式存在。非晶Ge氧化物纳米颗粒的尺寸随着起始材料中Ge含量的增加而增加，因此光学吸收边向更长的波长移动。585和654 nm的发射可能分别来自于非晶GeO 2核和外SiO2基质界面处的小“过氧自由基”和非桥氧。
Ge-doped SiO2glasses are prepared by a sol–gel method using ethyl silicate (Si(OC2H5)4) and 3-trichologermanium propanoic acid (Cl3GeCH2CH2COOH) as starting materials. The Ge-doped SiO2glasses show a strong room-temperature photoluminescence with peaks at 585 and 654nm under the excitation of the 514.5nm line of an Ar+laser. The peak position of photoluminescence spectrum weakly depends on the Ge/Si ratio. The photoluminescence intensity increases sharply as the Ge/Si ratio is increased. The Ge-doped SiO2gel glasses were characterized by X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy. It reveals that Ge atoms exist as amorphous GeO2particles in the gel glasses. The size of the amorphous Ge oxide nanoparticles increases with an increase in the content of Ge in the starting materials, and thus optical absorption edge is shifted towards longer wavelengths. The 585 and 654nm emissions may originate from the small “peroxy radical” and the nonbridging oxygens at the interface between the amorphous GeO2core and outer SiO2matrix, respectively.