Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator.
Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator.
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DOI：
10.1364/oe.20.007081
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发表时间：
2012-03
期刊：
影响因子：
3.8
通讯作者：
J. Ding;Hongtao Chen;Lin Yang;Lei Zhang;R. Ji;Yonghui Tian;Weiwei Zhu;Yangyang Lu;P. Zhou;Rui Min;Mingbin Yu
中科院分区：
文献类型：
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作者：
J. Ding;Hongtao Chen;Lin Yang;Lei Zhang;R. Ji;Yonghui Tian;Weiwei Zhu;Yangyang Lu;P. Zhou;Rui Min;Mingbin Yu
我们演示了一个26 Gbit/s的马赫-曾德尔硅光调制器。对掺杂浓度和分布进行了优化，得到调制效率为1.28V·cm的调制优值（VπL）。我们在p型和n型掺杂区之间设计了一个80 nm宽的本征硅间隙，以减小二极管的电容，并防止二极管工作在慢扩散模式。因此，调制器可以在没有偏置的情况下用0.5V的小差分电压驱动。在不消除串联电阻的耗散功率和电信号的反射功率的情况下，最大功耗为3.8mW。
We demonstrate a 26 Gbit/s Mach-Zehnder silicon optical modulator. The doping concentration and profile are optimized, and a modulation efficiency with the figure of merit (VπL) of 1.28 V·cm is achieved. We design an 80-nm-wide intrinsic silicon gap between the p-type and n-type doped regions to reduce the capacitance of the diode and prevent the diode from working in a slow diffusion mode. Therefore, the modulator can be driven with a small differential voltage of 0.5 V with no bias. Without the elimination of the dissipated power of the series resistors and the reflected power of the electrical signal, the maximum power consumption is 3.8 mW.