Growth and characterization of MnAs/ZnSe ferromagnet/semiconductor hybrid heterostructures
Growth and characterization of MnAs/ZnSe ferromagnet/semiconductor hybrid heterostructures
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MnAs/ZnSe 铁磁体/半导体混合异质结构的生长和表征
DOI：
10.1116/1.1376383
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发表时间：
2001
影响因子：
1.4
通讯作者：
D. Awschalom
中科院分区：
文献类型：
--
作者：
S. Chun;J. Berry;K. Ku;N. Samarth;I. Malajovich;D. Awschalom
本文详细研究了GaAs（100）衬底上MnAs/ZnSe异质结构在不同生长条件下的分子束外延。与MnAs/GaAs系统一样，这些MnAs/ZnSe外延层在室温下显示出铁磁性，尽管具有不同的结构和磁性特征。我们研究的参数，如As/Mn束等效压力比，衬底温度，模板，和衬底上的MnAs/ZnSe异质结的取向差的影响，利用原位反射高能电子衍射，以及非原位X射线衍射和原子力显微镜。这一结构信息与磁光克尔效应和超导量子干涉仪测磁得到的磁性相关。最后，我们讨论了MnAs/ZnSe/MnAs三层的自旋阀型应用的性能的初步研究。
We report a detailed study of the molecular beam epitaxy of MnAs/ZnSe heterostructures on GaAs (100) substrates under varying growth conditions. As with the MnAs/GaAs system, these MnAs/ZnSe epilayers show ferromagnetism at room temperature, although with different structural and magnetic characteristics. We study the impact of parameters such as the As/Mn beam equivalent pressure ratio, substrate temperature, templating, and substrate misorientation on the MnAs/ZnSe heterostructures utilizing in situ reflectance high energy electron diffraction, as well as ex situ x-ray diffraction and atomic force microscopy. This structural information is correlated with magnetic properties obtained from magneto-optical Kerr effect and superconducting quantum interference device magnetometry. Finally, we discuss preliminary studies on the properties of MnAs/ZnSe/MnAs trilayers for spin-valve type applications.