Rate equation analysis of efficiency droop in InGaN light-emitting diodes
Rate equation analysis of efficiency droop in InGaN light-emitting diodes
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DOI：
10.1063/1.3216578
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发表时间：
2009-08-24
影响因子：
4
通讯作者：
Shim, Jong-In
中科院分区：
文献类型：
--
作者：
Ryu, Han-Youl;Kim, Hyun-Sung;Shim, Jong-In
基于速率方程模型分析了InGaN发光二极管（LED）的效率下降。通过使用效率与电流密度关系的峰值点作为速率方程分析的参数，可以明确地确定任意电流密度下的内部量子效率和每个复合电流，而无需任何A、B和C系数的知识。理论分析与实验结果进行了比较，发现理论模型与实验结果吻合较好，复合系数的研究表明，单独的俄歇复合不足以解释InGaN LED的效率下降。
Efficiency droop in InGaN light-emitting diodes (LEDs) is analyzed based on the rate equation model. By using the peak point of the efficiency versus current-density relation as the parameters of the rate equation analysis, internal quantum efficiency and each recombination current at arbitrary current density can be unambiguously determined without any knowledge of A, B, and C coefficients. The theoretical analysis is compared with measured efficiency of a LED sample and good agreement between the model and experiment is found. The investigation of recombination coefficients shows that Auger recombination alone is not sufficient to explain the efficiency droop of InGaN LEDs.