Impact of Interstitial Ni on the Thermoelectric Properties of the Half-Heusler TiNiSn.
Impact of Interstitial Ni on the Thermoelectric Properties of the Half-Heusler TiNiSn.
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DOI：
10.3390/ma11040536
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发表时间：
2018-03-30
期刊：
影响因子：
--
通讯作者：
Bos JG
中科院分区：
文献类型：
--
作者：
Barczak SA;Buckman J;Smith RI;Baker AR;Don E;Forbes I;Bos JG
TiNiSn是一种被广泛研究的半赫斯勒合金，在余热回收方面具有巨大的潜力。在这里，我们报告的结构和热电性能的一系列富含金属的TiNi 1 +ySn组合物通过固态反应和热压制备。由中子粉末衍射确定了间隙镍含量与晶格常数之间的一般关系。高分辨同步辐射X射线粉末衍射结果表明，热压过程中合金发生了应变增宽，这是由于间隙Ni的亚稳态排列所致。霍尔测量证实，间隙Ni导致弱n型掺杂和载流子迁移率降低，这将这些样品的功率因数限制在2.5-3 mW m−1 K−2。热导率在Callaway近似下建模，并与间隙Ni的量定量相关，导致化学计量TiNiSn在323 K时的预测值为12.7 W m−1 K−1。间隙Ni导致热带隙的减小，并将峰值ZT = 0.4移动到较低的温度，从而提供了设计宽ZT平台的可能性。这项工作增加了进一步了解少量的间隙镍的热和电的传输TiNiSn的影响。
TiNiSn is an intensively studied half-Heusler alloy that shows great potential for waste heat recovery. Here, we report on the structures and thermoelectric properties of a series of metal-rich TiNi1+ySn compositions prepared via solid-state reactions and hot pressing. A general relation between the amount of interstitial Ni and lattice parameter is determined from neutron powder diffraction. High-resolution synchrotron X-ray powder diffraction reveals the occurrence of strain broadening upon hot pressing, which is attributed to the metastable arrangement of interstitial Ni. Hall measurements confirm that interstitial Ni causes weak n-type doping and a reduction in carrier mobility, which limits the power factor to 2.5–3 mW m−1 K−2 for these samples. The thermal conductivity was modelled within the Callaway approximation and is quantitively linked to the amount of interstitial Ni, resulting in a predicted value of 12.7 W m−1 K−1 at 323 K for stoichiometric TiNiSn. Interstitial Ni leads to a reduction of the thermal band gap and moves the peak ZT = 0.4 to lower temperatures, thus offering the possibility to engineer a broad ZT plateau. This work adds further insight into the impact of small amounts of interstitial Ni on the thermal and electrical transport of TiNiSn.
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