Time-resolved investigations of sidewall recombination in dry-etched GaAs wires
Time-resolved investigations of sidewall recombination in dry-etched GaAs wires
复制标题
干法蚀刻 GaAs 线侧壁复合的时间分辨研究
DOI：
10.1063/1.103003
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发表时间：
1990
影响因子：
4
通讯作者：
H. Meier
中科院分区：
文献类型：
--
作者：
G. Mayer;B. Maile;R. Germann;A. Forchel;P. Grambow;H. Meier
利用皮秒光谱技术研究了宽度为12 μm ~ 300 nm的GaAs/GaAlAs干法刻蚀线的侧壁复合。利用电子束光刻和不同的反应离子刻蚀工艺制作了这些金属丝。激子的寿命强烈降低，由于侧壁复合线宽度减小。用模型计算拟合了实验观察到的寿命与宽度的关系，确定了50 K时的表面复合速度为S=2×106 cm/s。S随温度而增加，并且与蚀刻工艺无关。
We have investigated the sidewall recombination in dry‐etched GaAs/GaAlAs wires with widths between 12 μm and 300 nm using picosecond spectroscopy. The wires were fabricated with electron beam lithography and different reactive ion etching processes. The excitonic lifetimes decrease strongly with decreasing wire widths due to sidewall recombination. Using a model calculation to fit the experimentally observed width dependence of the lifetimes the surface recombination velocity is determined to be S=2×106 cm/s at 50 K. S increases with temperature and is independent of the etching process.