Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal
Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal
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DOI：
10.1063/1.4821279
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发表时间：
2013-09-09
影响因子：
4
通讯作者：
Yoshino, Kenji
中科院分区：
文献类型：
--
作者：
Nagaoka, Akira;Miyake, Hideto;Yoshino, Kenji
在20 - 300 K温度范围内对四元化合物Cu_2ZnSnS_4（CZTS）单晶进行了变温霍尔效应测量。电导机制可以通过使用Mott可变范围跳跃和典型的热激活传导的双路径系统来描述。受体带的中心能级比价带最大值高132 meV，宽度为40 meV。观察到CZTS中的激活能与受主浓度之间的相关性。(C)2013 AIP Publishing LLC.
Temperature dependent Hall effect measurements from 20 to 300K have been performed on the quaternary compounds Cu2ZnSnS4 (CZTS) single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. The center level of the acceptor band is 132 meV above the valence band maximum and is of width 40 meV. A correlation between the activation energy and acceptor concentration in CZTS is observed. (C) 2013 AIP Publishing LLC.