Annihilation mechanism of threading dislocations in AlN grown by growth form modification, method using V/III ratio
Annihilation mechanism of threading dislocations in AlN grown by growth form modification, method using V/III ratio
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DOI：
10.1016/j.jcrysgro.2006.11.013
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发表时间：
2007-03-01
影响因子：
1.8
通讯作者：
Bandoh, Akira
中科院分区：
文献类型：
--
作者：
Imura, Masataka;Fujimoto, Naoki;Bandoh, Akira
采用高温金属-有机气相外延技术（HT-MOVPE）在c平面蓝宝石衬底上生长出高质量的原子平面AlN层。在生长过程中控制V/III比可以改变各方面的生长速度，从而改变过渡V/III比时晶粒的宏观形态。在晶粒形态变化时，螺纹位错随着位错环的形成而消失。AlN结晶度的提高是由于在生长过程中小AlN晶粒被大AlN晶粒合并。通过透射电子显微镜（TEM）和原子力显微镜（AFM）证实了这些现象。(c) 2006 Elsevier B.V.版权所有
High-quality AlN layers with atomically flat surface were grown on a c-plane sapphire substrate by high-temperature metal-organic vapor phase epitaxy (HT-MOVPE). Controlling V/III ratio during growth led to change the growth rate for each facet resulting in the change of the macroscopic form of grain at the transition V/III ratio. The threading dislocations were annihilated with the formation of dislocation loops at the changing of grain form. AlN crystallinity was improved due to the reason that small AlN grains were incorporated by the big AlN grains during growth. These phenomena were confirmed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). (c) 2006 Elsevier B.V. All rights reserved.