Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
复制标题
均匀热空穴注入后金属氧化物半导体场效应晶体管氧化物中俘获空穴的空间分布
DOI：
10.1143/jjap.30.3652
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发表时间：
1991
影响因子：
1.5
通讯作者：
Chihiro Hamaguchi Chihiro Hamaguchi
中科院分区：
文献类型：
--
作者：
Q. Khosru;N. Yasuda;A. Maruyama;Kenji Taniguchi Kenji Taniguchi;Chihiro Hamaguchi Chihiro Hamaguchi
研究了均匀热空穴注入一组氧化层厚度在4.6 ~ 10.6nm范围内的p沟道金属氧化物半导体（pMOS）晶体管的栅氧化层后，栅氧化层中无电荷层的空穴陷阱分布和时间依赖性。已经发现，陷阱分布相对于距Si/SiO2界面的距离具有指数变化，并且存在于距界面6 nm内。发现陷阱空穴密度与氧化物电场有轻微的依赖关系，界面附近存在一个无电荷层，这是弛豫过程中空穴脱陷的结果。测量的时间依赖性的无电荷层在放松过程中显示，它最初随时间增加，并在4 nm左右饱和。
Hole trap distribution and time dependence of the charge-free layer in the gate-oxide of p-channel metal oxide semiconductor (pMOS) transistors have been investigated after uniform hot-hole injection into the oxide of a set of pMOS transistors having very thin oxide thicknesses in the range of 4.6 to 10.6 nm. It has been found that the trap distribution has an exponential variation with respect to the distance from the Si/SiO2 interface and exists within 6 nm from the interface. A slight dependence of trapped-hole density on the oxide electric field was also found. A charge-free layer exists near the interface as a consequence of hole detrapping during relaxation. Measured time dependence of the charge-free layer during relaxation reveals that it increases initially with time and saturates at around 4 nm.