Strained VO2 Nanostructure Thin Films with an Unaffected Insulator-Metal Transition
Strained VO2 Nanostructure Thin Films with an Unaffected Insulator-Metal Transition
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DOI：
10.1002/pssb.201900785
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发表时间：
2020-02-18
影响因子：
1.6
通讯作者：
Dai, Ning
中科院分区：
文献类型：
--
作者：
Huang, Tiantian;Wang, Shuxia;Dai, Ning
在相关的二氧化钒材料中，绝缘体-金属转变（IMT）带来了一些奇妙的物理变化，并伴随着结构相变（SPT）。究竟是晶格形变引起的电子-声子相互作用还是电子-电子关联驱动了IMT转变，目前还存在争议。理解该机制的另一种具有挑战性的方法是将VO 2中的SPT与IMT分开。了解和操纵VO 2中的应变和缺陷对于调节IMT行为很重要。在此，应变VO 2纳米结构薄膜与不受影响的IMT行为。声子模的位移和晶面间距的减小表明VO 2纳米结构薄膜中存在面内应变。这种结构应变不影响转变温度，但为光调制提供了平台。研究结果表明，未受影响的IMT有助于深入了解VO 2中IMT和SPT的行为，甚至有助于创造先进的电子设备。
Insulator-metal transition (IMT) brings some fantastic physical changes and accompanies structure phase transition (SPT) in correlated vanadium dioxide (VO2) materials. It is still in dispute whether the electron-phonon interaction induced by the lattice deformation or the electron-electron correlation drives the IMT transition. An alternative and challenging way to understand the mechanism is to separate SPT from IMT in VO2. Understanding and manipulating strain and defect in VO2 is important to regulate the IMT behavior. Herein, strained VO2 nanostructure thin films with unaffected IMT behavior are presented. The shifted phonon modes and the decreased interplanar spacing indicate the presence of the in-plane strain in VO2 nanostructure thin films. Such structural strains do not affect the transition temperature but provide a platform for the light modulation. It is believed that the unaffected IMT is beneficial for in-depth understanding of the IMT and SPT behaviors in VO2 and even the creation of advanced electronic devices.