Self-assembled silicon-germanium nanostructures for CMOS compatible light emitters
Self-assembled silicon-germanium nanostructures for CMOS compatible light emitters
复制标题
用于 CMOS 兼容光发射器的自组装硅锗纳米结构
DOI：
10.1002/pssc.201084032
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
L. Tsybeskov
中科院分区：
文献类型：
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作者：
D. J. Lockwood;L. Tsybeskov
为了具有商业价值，基于SiGe纳米结构的光发射器应该是高效、快速、在室温下可操作的，并且与CMOS技术兼容。此外，发射波长应与1.3-1.6 μm的光波导低损耗光谱区相匹配。在其他方法中，外延生长的Si/SiGe量子点/量子阱复合物在所需的光谱范围内产生有效的光致发光和电致发光。直到最近，这些器件的实际应用的主要障碍是发光量子效率的强热猝灭和长载流子辐射寿命。综述了Si/SiGe纳米结构中载流子复合物理的最新研究进展，提出了一种用于片上光互连的CMOS兼容发光器件的新途径。
©加拿大女王陛下[2011]。经工业部长许可复制
To be commercially valuable, light emitters based on SiGe nanostructures should be efficient, fast, operational at room temperature, and be compatible with the CMOS technology. Also, the emission wavelength should match the optical waveguide low-loss spectral region of 1.3–1.6 μm. Among other approaches, epitaxially-grown Si/SiGe quantum dot/quantum well complexes produce efficient photoluminescence and electroluminescence in the required spectral range. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency and a long carrier radiative lifetime. The latest progress in the understanding of physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters for on-chip optical interconnects is proposed.
© Her Majesty the Queen in Right of Canada [2011]. Reproduced with the permission of the Minister of Industry