Quantum Proton Entanglement in Nanocrystalline Silicon Surface
Quantum Proton Entanglement in Nanocrystalline Silicon Surface
复制标题
纳米晶硅表面的量子质子纠缠
DOI：
10.1103/physrevb.103.245401
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发表时间：
2021
影响因子：
2.9
通讯作者：
and Susumu Ikeda
中科院分区：
文献类型：
--
作者：
Takahiro Matsumoto;Hidehiko Sugimoto;Takashi Ohhara;Stephen M. Bennington;Makoto Tomita;and Susumu Ikeda
研究了两个质子在硅表面的量子纠缠态。利用非弹性中子散射谱研究了纳米晶硅的表面振动动力学。质子是相同的，因此谐振子宇称限制了自旋自由度，形成了所有表面振动能级的强纠缠态。与以前在氢分子中观察到的质子纠缠相比，这种纠缠的特征在于自旋单重基态和自旋三重激发态之间的巨大能量差为113 meV。我们从理论上证明了太赫兹纠缠光子对利用质子纠缠的级联跃迁。质子量子比特和现代硅技术的结合可以导致计算平台的自然统一，从而实现前所未有的大规模并行处理水平。
We investigate the quantum entangled state of two protons terminating on a silicon surface. The entangled states were detected using the surface vibrational dynamics of nanocrystalline silicon with inelastic neutron scattering spectroscopy. The protons are identical, therefore the harmonic oscillator parity constrains the spin degrees of freedom, forming strongly entangled states for all the energy levels of surface vibrations. Compared to the proton entanglement previously observed in hydrogen molecules, this entanglement is characterized by an enormous energy difference of 113 meV between the spin singlet ground state and the spin triplet excited state. We theoretically demonstrate the cascade transition of terahertz entangled photon pairs utilizing proton entanglement. A combination of proton qubits and a modern silicon technology can result in a natural unification of computing platforms, thereby achieving unprecedented levels of massive parallelism processing.