Magnetic field direction and temperature dependences of rearrangement of crystallographic domains in an antiferromagnetic CoO
Magnetic field direction and temperature dependences of rearrangement of crystallographic domains in an antiferromagnetic CoO
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DOI：
10.1016/j.jallcom.2011.12.114
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发表时间：
2013-11
影响因子：
6.2
通讯作者：
T. Terai;T. Kakeshita
中科院分区：
文献类型：
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作者：
T. Terai;T. Kakeshita
我们研究了在CoO （Neel温度：293 K）中反铁磁伪四方相中晶体畴重排的磁场方向和温度依赖关系。结果发现，当磁场沿[0 0 1]p（p代表母相）方向施加时，重排发生在温度为170 ~ 293 K之间，而当磁场沿[1 1 0]p或[1 1 1]p方向施加时，重排发生在温度为170 ~ 293 K之间。我们计算了由磁场驱动的剪切应力τmag，并将其与孪晶平面运动所需的剪切应力τreq进行了比较，发现当τ mags等于或大于τreq时，会发生晶体学畴的重排，反之亦然。这种观察结果与许多铁磁形状记忆合金相同。
We have investigated the magnetic field direction and temperature dependences of rearrangement of crystallographic domains in an antiferromagnetic pseudo-tetragonal phase in CoO (Neel temperature: 293 K). As a result, we found that the rearrangement occurs at temperatures between 170 and 293 K when a magnetic field is applied along [0 0 1]p(p represents the parent phase) direction, but not when a magnetic field is applied along [1 1 0]por [1 1 1]pdirections. We have calculated the shear stress driven by a magnetic field,τmag, and compared it with the shear stress required for twinning plane movement,τreqand found that whenτmagis equal to or larger thanτreq, the rearrangement of crystallographic domains occurs, and vice versa. This observation is the same as in many ferromagnetic shape memory alloys.