Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing
Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing
复制标题
DOI：
10.1021/acsami.1c18329
复制
发表时间：
2021-10-29
影响因子：
9.5
通讯作者：
Nomura, Kenji
中科院分区：
文献类型：
--
作者：
Huang, Chi-Hsin;Chang, Hsuan;Nomura, Kenji
一种新型的基于二维（2D）SnO 2半导体的栅极可调忆阻器，即忆阻器和晶体管的集成器件--记忆晶体管，被证明可以推进下一代神经形态计算技术。来自低温和无真空液态金属工艺的多晶2D-SnO 2忆阻器提供了几个有趣的阻变特性，如优异的数字/模拟阻变、多态存储和阻变状态的栅极可调谐功能。值得注意的是，在传统的两端忆阻器中无法实现的栅极可调谐功能提供了通过调节栅极偏置来实现异突触模拟切换的能力，以实现复杂的神经形态学习。我们成功地证明了门可调突触器件动态调制的模拟开关行为具有良好的线性度和提高电导变化率的高识别精度的学习。所提出的栅极可调2D氧化物记忆晶体管将推进神经形态器件技术，并开辟了新的机会，设计学习计划与额外的自由度。
A new type of two-dimensional (2D) SnO2 semiconductor-based gate-tunable memristor, that is, a memtransistor, an integrated device of a memristor and a transistor, was demonstrated to advance next-generation neuromorphic computing technology. The polycrystalline 2D-SnO2 memristors derived from a low-temperature and vacuum-free liquid metal process offer several interesting resistive switching properties such as excellent digital/analog resistive switching, multistate storage, and gatetunability function of resistance switching states. Significantly, the gate tunability function that is not achievable in conventional two-terminal memristors provides the capability to implement heterosynaptic analog switching by regulating gate bias for enabling complex neuromorphic learning. We successfully demonstrated that the gate-tunable synaptic device dynamically modulated the analog switching behavior with good linearity and an improved conductance change ratio for high recognition accuracy learning. The presented gate-tunable 2D-oxide memtransistor will advance neuromorphic device technology and open up new opportunities to design learning schemes with an extra degree of freedom.