Effects of laser power on the growth of polycrystalline AlN films by laser chemical vapor deposition method
Effects of laser power on the growth of polycrystalline AlN films by laser chemical vapor deposition method
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激光功率对激光化学气相沉积法生长多晶AlN薄膜的影响
DOI：
10.1016/j.surfcoat.2013.04.043
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
T. Goto
中科院分区：
文献类型：
--
作者：
Y. You;A. Ito;R. Tu;T. Goto
以乙酰丙酮铝和氨水为原料，采用激光化学气相沉积法制备了多晶氮化铝（AlN）薄膜。研究了沉积条件对晶相、成分和显微结构的影响。在激光功率高于 100 W、沉积温度高于 803 K 的条件下制备了多晶 AlN 薄膜。随着激光功率的增加和总压力的降低，AlN 薄膜的微观结构从聚集晶粒到刻面晶粒再到金字塔晶粒。
Polycrystalline aluminum nitride (AlN) films were prepared by laser chemical vapor deposition method using aluminum acetylacetonate and ammonia as source materials. The effects of deposition conditions on the crystal phase, composition and microstructure were investigated. Polycrystalline AlN films were prepared at a laser power above 100 W and a deposition temperature above 803 K. The microstructure of AlN film changed from aggregated grains to faceted grains to pyramidal grains with increasing laser power and with decreasing total pressure.