Time‐resolved investigations of sidewall recombination and in‐plane diffusivity in dry‐etched InGaAs/GaAs air‐post structures
Time‐resolved investigations of sidewall recombination and in‐plane diffusivity in dry‐etched InGaAs/GaAs air‐post structures
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干法蚀刻 InGaAs/GaAs 空气柱结构中侧壁复合和面内扩散率的时间分辨研究
DOI：
10.1063/1.112344
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发表时间：
1994
影响因子：
4
通讯作者：
K. Asakawa
中科院分区：
文献类型：
--
作者：
Y. Nambu;H. Yokoyama;T. Yoshikawa;Y. Sugimoto;K. Asakawa
通过时间分辨光致发光测量研究了干蚀刻InGaAs/GaAs空气柱结构中的非辐射载流子重组。在测量的载流子寿命中可以观察到线性和尺寸直接相关的区域。结果表明，利用载流子扩散模型可以同时计算平面内扩散率Dr和侧壁非辐射复合速度Sr。通过比较干蚀刻后的湿蚀刻样品和湿蚀刻样品，可以发现通过湿蚀刻去除侧壁的亚表面层，Dr和Sr都发生了变化。讨论了这种变化的可能原因和决定Sr的机理。
Nonradiative carrier recombination in dry‐etched InGaAs/GaAs air‐post structures is investigated by time‐resolved photoluminescence measurement. Both linearly and squarely size‐dependent regions are observed in the measured carrier lifetime. It is shown that in‐plane diffusivity Dr and sidewall nonradiative recombination velocity Sr can be simultaneously evaluated using a carrier diffusion model. Comparing an as‐etched sample and a sample wet etched after dry etching shows that Dr as well as Sr are changed by removing the subsurface layer at the sidewall by wet etching. Possible causes of this change and the mechanism determining Sr are discussed.