Optical coherence of diamond nitrogen-vacancy centers formed by ion implantation and annealing
Optical coherence of diamond nitrogen-vacancy centers formed by ion implantation and annealing
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DOI：
10.1103/physrevb.99.161203
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发表时间：
2019-04-19
影响因子：
3.7
通讯作者：
Englund, D. R.
中科院分区：
文献类型：
--
作者：
van Dam, S. B.;Walsh, M.;Englund, D. R.
量子光学科学和技术的进步与固态发射器（例如金刚石中的氮空位（NV）中心）严重依赖于发射器光学跃迁的相干性。在精确控制的位置创建 NV 中心的一种广泛采用的策略是氮离子注入，然后进行高温退火工艺。我们报告了将 NV 中心光学相干性与氮原子起源直接相关的实验数据。这些研究揭示了低应变、窄光学线宽 (1 GHz) 和更高的应变。数据表明，由注入氮形成的 NV 中心的光学相干性差并不是由于与金刚石或同位素相关的固有效应造成的。这些结果对当前 NV 中心创建协议的定位精度具有直接影响，并指出需要进一步研究晶格损伤对注入离子的 NV 中心相干性的影响。
The advancement of quantum optical science and technology with solid-state emitters such as nitrogen-vacancy (NV) centers in diamond critically relies on the coherence of the emitters' optical transitions. A widely employed strategy to create NV centers at precisely controlled locations is nitrogen ion implantation followed by a high-temperature annealing process. We report on experimental data directly correlating the NV center optical coherence to the origin of the nitrogen atom. These studies reveal low-strain, narrow-optical-linewidth ( 1 GHz) and higher strain. The data show that the poor optical coherence of the NV centers formed from implanted nitrogen is not due to an intrinsic effect related to the diamond or isotope. These results have immediate implications for the positioning accuracy of current NV center creation protocols and point to the need to further investigate the influence of lattice damage on the coherence of NV centers from implanted ions.