Non-Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low-Loss Phase Change Material
Non-Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low-Loss Phase Change Material
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DOI：
10.1002/adom.202002049
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发表时间：
2021-03-04
影响因子：
9
通讯作者：
Majumdar, Arka
中科院分区：
文献类型：
--
作者：
Fang, Zhuoran;Zheng, Jiajiu;Majumdar, Arka
相变材料（PCM）长期以来一直被用作可重写光盘和后来的随机存取存储器中的存储介质。近年来，相变材料与纳米光子结构的集成为非易失性可重构光学引入了新的范例。然而，原型 PCM Ge2Sb2Te5 在可见光和电信波长中的高损耗从根本上限制了其应用。 Sb2S3 最近作为一种宽带隙 PCM 出现，其透明窗口范围从 610 nm 到近红外。在本文中，首次在750 nm和1550 nm的集成光子平台中通过实验证明了Sb2S3的强光相位调制和低光损耗。与硅相反，Sb2S3 的热光系数为负，使得 Sb2S3-Si 混合平台对热波动不太敏感。最后，展示了 Sb2S3 集成非易失性微环开关，该开关可以在高传输状态和低传输状态之间进行电气调谐，对比度超过 30 dB。这项工作通过实验验证了 Sb2S3 在与固态量子发射器和电信相关的波长范围内的显着相位修改和低损耗，从而实现了光场可编程门阵列、制造后修整和大规模集成量子光子网络等潜在应用。
Phase change materials (PCMs) have long been used as a storage medium in rewritable compact disk and later in random access memory. In recent years, integration of PCMs with nanophotonic structures has introduced a new paradigm for non-volatile reconfigurable optics. However, the high loss of the archetypal PCM Ge2Sb2Te5 in both visible and telecommunication wavelengths has fundamentally limited its applications. Sb2S3 has recently emerged as a wide-bandgap PCM with transparency windows ranging from 610 nm to near-IR. In this paper, the strong optical phase modulation and low optical loss of Sb2S3 are experimentally demonstrated for the first time in integrated photonic platforms at both 750 and 1550 nm. As opposed to silicon, the thermo-optic coefficient of Sb2S3 is shown to be negative, making the Sb2S3-Si hybrid platform less sensitive to thermal fluctuation. Finally, a Sb2S3 integrated non-volatile microring switch is demonstrated which can be tuned electrically between a high and low transmission state with a contrast over 30 dB. This work experimentally verifies prominent phase modification and low loss of Sb2S3 in wavelength ranges relevant for both solid-state quantum emitter and telecommunication, enabling potential applications such as optical field programmable gate array, post-fabrication trimming, and large-scale integrated quantum photonic network.