Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal
Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal
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DOI：
10.1103/physrevb.79.193104
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发表时间：
2009-05
影响因子：
3.7
通讯作者：
Kenji Watanabe;T. Taniguchi
中科院分区：
文献类型：
--
作者：
Kenji Watanabe;T. Taniguchi
在8K下研究了六方氮化硼的带边光学性质。光致发光光谱显示出两个系列的谱带，即尖锐的(S)和漫反射的(D)，S的快(0.6 ns)和D的慢(5 Ns)辐射衰减时间。每个系列由四个具有大斯托克斯位移的带组成，这些带归因于强激子-声子相互作用的自陷激子。这两个系列的四个发光带分别来自四个自由激子能级，其中理论预测的双简并暗激子能级和亮激子能级用激发态的Jahn-Teller失真来分辨。
Optical properties near the band edge of hexagonal boron nitride were studied at 8 K. The photoluminescence spectrum shows two series of bands, namely, sharp (S) and diffuse (D), which are also distinguished by their fast (0.6 ns) for S and slow (5 ns) for D radiative decay time. Each series is composed of four bands with large Stokes shifts that are attributed to self-trapped excitons by the strong exciton-phonon interaction. The respective four luminescence bands of the two series originate from the four free-exciton levels in which the doubly degenerated dark and bright exciton levels theoretically predicted are resolved with the Jahn-Teller distortion in the excited states.