Series connection of 3.3 kV IGBTs with active voltage balancing
Series connection of 3.3 kV IGBTs with active voltage balancing
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具有主动电压平衡功能的 3.3 kV IGBT 串联
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
L. Meysenc
中科院分区：
文献类型：
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作者：
A. Piazzesi;L. Meysenc
IGBT（绝缘栅双极晶体管）在高压电力电子系统中的应用由于其低成本和低复杂性而成为一种有吸引力的解决方案。半导体制造商正在努力设计具有更高阻断电压的芯片，但出于可靠性和成本的考虑，今天更容易的解决方案是使用标准IGBT。本文介绍了3.3 kV，100 A芯片串联连接的行为，并与一个主动门控电路，在静态和动态阶段的电压平衡驱动。文章的第一部分介绍了该原理的理论描述和一些设计建议。第二部分是实验结果。这些测试表明，在4 kV直流链路电压下，可以安全地关断两倍标称电流。最后，短路关断也已成功地进行了测试，显示出良好的平衡过电压，即使在这种紧急情况下。
Application of IGBTs (insulated gate bipolar transistors) to high voltage power electronics systems is today becoming an attractive solution because of low cost and low complexity. Semiconductor manufacturers are making efforts to design chips with higher blocking voltages, but for reliability and cost purposes, an easier solution today would be to use standard IGBTs. This paper describes the behaviour of 3.3 kV, 100 A chips connected in series and driven with an active gate control circuit which balances the voltage during both static and dynamic phase. The first part of the article presents the theoretical description of the principle and some design recommendations. The second part contains experimental results. These tests demonstrated that it is possible to safely turn off two times the nominal current under 4 kV DC link voltage. Finally, short-circuit turn-off has been also successfully tested, showing a good balancing of the overvoltages, even under such emergency conditions.