Analysis and simulation of a junctionless double gate MOSFET for high-speed applications
Analysis and simulation of a junctionless double gate MOSFET for high-speed applications
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DOI：
10.3938/jkps.67.1615
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发表时间：
2015-11
影响因子：
0.6
通讯作者：
R. Hosseini
中科院分区：
文献类型：
--
作者：
R. Hosseini
本文研究了无结双栅金属氧化物半导体场效应晶体管(JL DG MOSFET)和反型双栅金属氧化物半导体场效应晶体管(IM DG MOSFET)的电学特性。通过广泛的器件模拟，我们使用以下模拟性能参数对两种器件进行了比较：跨导、栅极电容和单位增益频率。此外，对JL DG MOSFET逆变器和IM DG MOSFET逆变器的工作性能进行了比较。JL DG MOSFET逆变器的模拟传播延迟约为0.52ps，而IM DG MOSFET逆变器的传播延迟为1.45ps。
In this paper, the electrical characteristics of a junctionless double-gate metal-oxide-semiconductor field-effect-transistor (JL DG MOSFET) and that of inversion-mode double-gate metal-oxide-semiconductor field-effect transistor (IM DG MOSFET) were investigated. Using extensive device simulations, we compared the two devices by using the following analog performance parameters: the transconductance, gate capacitance and unity gain frequency. Furthermore, the operation of the JL DG MOSFET inverter was compared with that of the IM DG MOSFET. The simulated propagation delay of the JL DG MOSFET inverter was found to be about 0.52 ps compared with the 1.45 ps achievable with the IM DG MOSFET inverter.